KAWASAKI, JAPAN -- Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched three 650V silicon carbide (SiC) MOSFETs equipped with its latest[1] 3rd generation SiC MOSFET chips and housed in surface-mount TOLL packages. The new devices are suitable for industrial equipment, such as switched-mode power supplies and power conditioners for photovoltaic generators. Volume shipments of the MOSFETs, “TW027U65C,” “TW048U65C,” and “TW083U65C,” start today.

The new products are Toshiba’s 3rd generation SiC MOSFETs in a general-purpose surface-mount TOLL package, which reduces device volume by more than 80% compared to through-hole packages such as TO-247 and TO-247-4L(X), and improves equipment power density.

The TOLL package also offers lower parasitic impedance[2] than through-hole packages, which helps to reduce switching losses. As a 4-terminal[3] package, a Kelvin connection can be used as the signal source terminal for the gate drive. This reduces the influence of inductance in the source wire within the package, achieving high-speed switching performance; in the case of TW048U65C, turn-on loss and turn-off loss are approximately 55% and 25%[4] lower, respectively, than in current Toshiba products[5], which will contribute to lower equipment power loss.

Toshiba will continue to expand its lineup to contribute to improved equipment efficiency and increased power capacity.

Notes:

[1] As of August 2025.
[2] Resistance, inductance, etc.
[3] A product with a signal-source terminal connected close to the FET chip.
[4] As of August 2025, values measured by Toshiba. For details, see Figure 1 in the version of this release on the Toshiba website.
[5] A 650V 3rd generation SiC MOSFET with equivalent voltage and On-resistance that uses the TO-247 package without Kelvin connection.