Kioxia: UFS Ver. 4.1 Embedded Flash Memory Devices for Next-generation Mobile Applications
TOKYO -- Kioxia Corporation, a world leader in memory solutions, announced that it has begun sampling new Universal Flash Storage(2) (UFS) Ver. 4.1 embedded memory devices, reinforcing its leadership in high-performance storage. Engineered to meet the demands of next-generation mobile applications, including advanced smartphones with on-device AI, the new devices offer improved performance with greater power efficiency(3), in a small BGA package.
UFS Ver. 4.1 devices from Kioxia integrate the company’s innovative BiCS FLASH™ 3D flash memory and a controller in a JEDEC-standard package. These new UFS devices are built with Kioxia’s 8th generation BiCS FLASH™ 3D flash memory(1). This generation introduces CBA (CMOS directly Bonded to Array) technology—an architectural innovation that marks a step-change in flash memory design. By directly bonding the CMOS circuitry to the memory array, CBA technology enables major gains in power efficiency, performance and density.
With a blend of speed and low power use, Kioxia’s UFS Ver. 4.1 devices are built to enhance user experiences—enabling faster downloads and smoother app performance.
Key Features include:
· Available in capacities of 256 gigabytes (GB), 512 GB and 1 terabyte (TB)
· Performance improvement over previous generation(3):
- Random writes: 512 GB / 1 TB approx. +30%
- Random reads: 512 GB approx. +45%, 1 TB approx. +35%
· Power efficiency improvement over previous generation(3):
- Reads: 512 GB / 1 TB approx. +15% improvement
- Writes: 512 GB / 1 TB approx. +20% improvement
· Host Initiated Defragmentation enables delayed garbage collection for uninterrupted fast performance during critical times
· WriteBooster buffer resizing provides better flexibility for optimal performance
· Support of the UFS Ver. 4.1 standard
· Reduced package height for the 1 TB model compared to the prior generation(4)
· Uses Kioxia’s 8th generation BiCS FLASH™ 3D flash memory(1)
